PHOTOLUMINESCENCE OF GAAS SINGLE QUANTUM WELLS CONFINED BY SHORT-PERIOD ALL-BINARY GAAS/ALAS SUPERLATTICES

被引：30

作者：

FUJIWARA, K

PLOOG, K

机构：

[1] Max-Planck-Inst fuer, Festkoerperforschung, Stuttgart,, West Ger, Max-Planck-Inst fuer Festkoerperforschung, Stuttgart, West Ger

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

METAL CLADDING - OPTOELECTRONIC DEVICES - Components - SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1063/1.95105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have studied MBE grown GaAs single quantum well heterostructures (SQWHs) which are composed of all-binary GaAs/AlAs heterostructures by using GaAs/AlAs short-period superlattices (SPSs) instead of the ternary alloy as cladding layer. They have demonstrated that these SPS confined SQWHs exhibit superior dynamics of photoexcited carriers leading to improved luminescence properties. The structures are thus highly attractive for application in novel optoelectronic devices.

引用

页码：1222 / 1224

页数：3

共 9 条

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