LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS

被引：222

作者：

BASTARD, G ^{[1
]}

DELALANDE, C ^{[1
]}

MEYNADIER, MH ^{[1
]}

FRIJLINK, PM ^{[1
]}

VOOS, M ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.29.7042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7042 / 7044

页数：3

共 13 条

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