EFFECT OF TRAPS ON LOW-TEMPERATURE HIGH ELECTRON-MOBILITY TRANSISTOR CHARACTERISTICS

被引:26
作者
CHI, JY
HOLMSTROM, RP
SALERNO, JP
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关键词
D O I
10.1109/EDL.1984.25954
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:381 / 384
页数:4
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