EFFECT OF TRAPS ON LOW-TEMPERATURE HIGH ELECTRON-MOBILITY TRANSISTOR CHARACTERISTICS

被引：26

作者：

CHI, JY

HOLMSTROM, RP

SALERNO, JP

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 09期

关键词：

D O I：

10.1109/EDL.1984.25954

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：381 / 384

页数：4

相关论文

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