TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS

被引：818

作者：

LANG, DV ^{[1
]}

LOGAN, RA ^{[1
]}

JAROS, M ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS, DEPT PHYS & ASTRON, AMHERST, MA 01003 USA

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.19.1015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1015 / 1030

页数：16

共 45 条

[1] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[2] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].

BARAFF, GA ;

APPELBAUM, JA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+

[3] PERSISTENT PHOTOCONDUCTIVITY IN DONOR-DOPED CD-1-XZN-XTE [J].

BURKEY, BC ;

KHOSLA, RP ;

FISCHER, JR ;

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1095-1102

[4] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[5] EFFECT OF TE AND S DONOR LEVELS ON PROPERTIES OF GAAS1-XPX NEAR DIRECT-INDIRECT TRANSITION [J].

CRAFORD, MG ;

STILLMAN, GE ;

ROSSI, JA ;

HOLONYAK, N .

PHYSICAL REVIEW, 1968, 168 (03) :867-&

[6]

DINGLE R, 1976, GALLIUM ARSENIDE REL, P210

[7]

DMOWSKI L, 1978, 14TH INT C PHYS SEM

[8] ADIABATIC THEORY OF AN ELECTRON IN A DEFORMABLE CONTINUUM [J].

EMIN, D ;

HOLSTEIN, T .

PHYSICAL REVIEW LETTERS, 1976, 36 (06) :323-326

[9] IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS [J].

GOTO, G ;

YANAGISAWA, S ;

WADA, O ;

TAKANASHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1127-1133

[10] DEEP LEVEL IMPURITIES IN SEMICONDUCTORS [J].

GRIMMEISS, HG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :341-376

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