DEEP LEVEL IMPURITIES IN SEMICONDUCTORS

[1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &

[2] ALLEN JW, 1964, 7TH P INT C PHYS SEM, P781

[3] LOCALIZED MAGNETIC STATES IN METALS [J]. PHYSICAL REVIEW, 1961, 124 (01): : 41 - &

[4] SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 235 - 245

[5] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1961, 124 (05): : 1321 - &

[6] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM. B [J]. PHYSICAL REVIEW, 1962, 127 (01): : 167 - &

[7] BALDERESCHI A, IN PRESS

[8] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[9] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +

[10] ISMPLE METHOD FOR DETERMINING PHOTO-IONIZATION CROSS SECTIONS [J]. PHYSICA STATUS SOLIDI, 1970, 42 (01): : K1 - +

[1] PHOTO-IONIZATION OF DEEP IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (06): : 1077 - &

[2] ALLEN JW, 1964, 7TH P INT C PHYS SEM, P781

[3] LOCALIZED MAGNETIC STATES IN METALS [J]. PHYSICAL REVIEW, 1961, 124 (01): : 41 - &

[4] SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 235 - 245

[5] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1961, 124 (05): : 1321 - &

[6] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM. B [J]. PHYSICAL REVIEW, 1962, 127 (01): : 167 - &

[7] BALDERESCHI A, IN PRESS

[8] APPLICATION OF QUANTUM DEFECT TECHNIQUES TO PHOTOIONIZATION OF IMPURITIES IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (10) : 2087 - &

[9] DETERMINATION OF OPTICAL IONIZATION CROSS SECTIONS IN GAP USING CHARGE STORAGE AND IMPURITY PHOTOVOLTAIC EFFECT [J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 589 - +

[10] ISMPLE METHOD FOR DETERMINING PHOTO-IONIZATION CROSS SECTIONS [J]. PHYSICA STATUS SOLIDI, 1970, 42 (01): : K1 - +