SHALLOW IMPURITY STATES IN SEMICONDUCTORS - ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS

被引：35

作者：

ANDERSON, WW ^{[1
]}

机构：

[1] OHIO STATE UNIV,DEPT ELECT ENGN,COLUMBUS,OH 43210

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 03期

关键词：

D O I：

10.1016/0038-1101(75)90055-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：235 / 245

页数：11

共 33 条

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[2]

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WENGERT, R ;

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[4]

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[5]

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[6] TRANSPORT AND PHOTOELECTRICAL PROPERTIES OF GALLIUM-ARSENIDE CONTAINING DEEP ACCEPTORS [J].

BROWN, WJ ;

BLAKEMOR.JS .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2242-&

[7]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, P51

[8] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J].

BURSTEIN, E ;

PICUS, G ;

HENVIS, B ;

WALLIS, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :65-74

[9]

BURSTEIN E, 1956, PHOTOCONDUCTIVITY C, P395

[10]

BURSTEIN E, 1956, PHOTOCONDUCTIVITY C, P114

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