DEEP LEVEL IMPURITIES IN SEMICONDUCTORS

[71] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[72] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[73] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[74] Lemke H., 1970, Physica Status Solidi A, V1, P283, DOI 10.1002/pssa.19700010211

[75] LIN AL, 1974, THESIS STANFORD U

[76] ADMITTANCE SPECTROSCOPY OF DEEP IMPURITY LEVELS - ZNTE SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (02) : 54 - &

[77] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[78] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[79] MASSEY HSW, 1969, ELECTRONIC IONIC IMP, V2

[80] MATRONITSKII YS, 1973, SOV PHYS SEMICOND+, V7, P788

[71] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (22) : 1525 - 1528

[72] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[73] CASCADE CAPTURE OF ELECTRONS IN SOLIDS [J]. PHYSICAL REVIEW, 1960, 119 (05): : 1502 - 1523

[74] Lemke H., 1970, Physica Status Solidi A, V1, P283, DOI 10.1002/pssa.19700010211

[75] LIN AL, 1974, THESIS STANFORD U

[76] ADMITTANCE SPECTROSCOPY OF DEEP IMPURITY LEVELS - ZNTE SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (02) : 54 - &

[77] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS [J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302

[78] MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J]. PHYSICAL REVIEW, 1955, 97 (04): : 869 - 883

[79] MASSEY HSW, 1969, ELECTRONIC IONIC IMP, V2

[80] MATRONITSKII YS, 1973, SOV PHYS SEMICOND+, V7, P788