DEEP LEVEL IMPURITIES IN SEMICONDUCTORS

[111] SAH CT, 1971, SOLID STATE ELECTRON, V14, P182

[112] DETERMINATION OF DEEP CENTERS IN SILICON BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (11) : 857 - &

[113] Schiff L.I., 1968, QUANTUM MECH

[114] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[115] SHOCKLEY W, 1949, BELL SYST TECH J, V28, P436

[116] BACKGROUND ENERGY-LEVEL SPECTROSCOPY IN GAP USING THERMAL RELEASE OF TRAPPED SPACE-CHARGE IN SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (08) : 350 - &

[117] PHONON CASCADE THEORY [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1727 - +

[118] ELECTRON-CAPTURE COEFFICIENT OF NEUTRAL INDIUM IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 787 - 790

[119] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 800 - &

[120] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550

[111] SAH CT, 1971, SOLID STATE ELECTRON, V14, P182

[112] DETERMINATION OF DEEP CENTERS IN SILICON BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1969, 12 (11) : 857 - &

[113] Schiff L.I., 1968, QUANTUM MECH

[114] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[115] SHOCKLEY W, 1949, BELL SYST TECH J, V28, P436

[116] BACKGROUND ENERGY-LEVEL SPECTROSCOPY IN GAP USING THERMAL RELEASE OF TRAPPED SPACE-CHARGE IN SCHOTTKY BARRIERS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (08) : 350 - &

[117] PHONON CASCADE THEORY [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1727 - +

[118] ELECTRON-CAPTURE COEFFICIENT OF NEUTRAL INDIUM IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 787 - 790

[119] RECOMBINATION-GENERATION AND OPTICAL PROPERTIES OF GOLD ACCEPTOR IN SILICON [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 800 - &

[120] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (08): : 3539 - 3550