ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS

被引：247

作者：

VANVECHTEN, JA

THURMOND, CD

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1976年 / 14卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.14.3539

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3539 / 3550

页数：12

共 56 条

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