FREE-TO-BOUND RECOMBINATION IMPORTANT IN GAP-ZN,O AT 300 DEGREES K

被引：5

作者：

BACHRACH, RZ ^{[1
]}

JAYSON, JS ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.7.2540

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：2540 / 2545

页数：6

相关论文

共 25 条

[1] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP
BACHRACH, RZ
LORIMOR, OG
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 700 - 713
[2] PHOTON COUNTING APPARATUS FOR KINETIC AND SPECTRAL MEASUREMENTS
BACHRACH, RZ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (05) : 734 - &
[3] BLATT FJ, 1968, PHYSICS ELECTRONIC C
[4] VARIATION OF ELECTRICAL PROPERTIES WITH ZN CONCENTRATION IN GAP
CASEY, HC
ERMANIS, F
WOLFSTIRN, KB
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (07) : 2945 - +
[5] CASTELLAN GW, 1951, SEMICONDUCTING MATER
[6] FREE-TO-BOUND AND BOUND-TO-BOUND TRANSITIONS IN CDS
COLBOW, K
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 742 - &
[7] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
CUTHBERT, JD
THOMAS, DG
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
[8] TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O)
CUTHBERT, JD
HENRY, CH
DEAN, PJ
[J]. PHYSICAL REVIEW, 1968, 170 (03): : 739 - +
[9] FREE-TO-BOUND AND BOUND EXCITON TRANSITIONS AT ISOELECTRONIC IMPURITIES - GAP(ZN,O)
DIDOMENICO, M
DISHMAN, JM
SINHA, KP
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1270 - +
[10] LIMINESCENCE TIME-RESPONSE MEASUREMENTS AND STRENGTH OF HOLE CAPTURE AT ZN-O IMPURITY COMPLEX IN GAP
DISHMAN, JM
CAMLIBEL, I
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1340 - &