共 15 条
- [1] TEMPERATURE-DEPENDENT RADIATIVE RECOMBINATION MECHANISMS IN GAP(ZN,O) AND GAP(CD,O) [J]. PHYSICAL REVIEW, 1968, 170 (03): : 739 - +
- [2] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1968, 168 (03): : 812 - &
- [3] FREE-TO-BOUND AND BOUND EXCITON TRANSITIONS AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04): : 1270 - +
- [4] RECOMBINATION KINETICS OF ELECTRONS AND HOLES AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J]. PHYSICAL REVIEW B, 1970, 1 (08): : 3381 - &
- [5] MINORITY-CARRIER TRAPPING AND LUMINESCENCE TIME RESPONSE OF SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1337 - &
- [6] CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O) [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2258 - &
- [7] LUMINESCENCE AND MINORITY CARRIER RECOMBINATION IN P-TYPE GAP(ZN,O) [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (06): : 1988 - +
- [8] RADIATIVE AND NONRADIATIVE RECOMBINATION AT NEUTRAL OXYGEN IN P TYPE GAP [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2588 - +
- [9] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &