CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O)

被引：22

作者：

DISHMAN, JM

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.5.2258

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2258 / &

共 37 条

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[6]

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