MINORITY-CARRIER TRAPPING AND LUMINESCENCE TIME RESPONSE OF SEMICONDUCTORS

被引：7

作者：

DISHMAN, JM

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 6卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.6.1337

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1337 / &

共 18 条

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[2]

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DEAN, PJ .

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[8] RECOMBINATION KINETICS OF ELECTRONS AND HOLES AT ISOELECTRONIC IMPURITIES - GAP(ZN,O) [J].

DISHMAN, JM ;

DIDOMENI.M .

PHYSICAL REVIEW B, 1970, 1 (08) :3381-&

[9] LIMINESCENCE TIME-RESPONSE MEASUREMENTS AND STRENGTH OF HOLE CAPTURE AT ZN-O IMPURITY COMPLEX IN GAP [J].

DISHMAN, JM ;

CAMLIBEL, I .

PHYSICAL REVIEW B, 1972, 6 (04) :1340-&

[10] CHARACTERIZATION OF DOMINANT RECOMBINATION CENTERS IN SEMICONDUCTORS FROM TEMPERATURE DEPENDENCE OF LUMINESCENCE EXCITATION-SPECTRA - GAP(ZN,O) [J].

DISHMAN, JM .

PHYSICAL REVIEW B, 1972, 5 (06) :2258-&

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