ELECTRON-CAPTURE COEFFICIENT OF NEUTRAL INDIUM IN SILICON

被引：6

作者：

SUNDSTROM, BO ^{[1
]}

HULDT, L ^{[1
]}

NILSSON, NG ^{[1
]}

机构：

[1] ROY INST TECHNOL,PHYS DEPT 3,S-10044 STOCKHOLM,SWEDEN

来源：

关键词：

D O I：

10.1016/0038-1098(75)90721-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：787 / 790

页数：4

共 20 条

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[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (05) : 319 - +
[9] MILNES AG, 1973, DEEP IMPURITIES SEMI, P290
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