IMPROVED METHOD OF DETERMINING DEEP IMPURITY LEVELS AND PROFILES IN SEMICONDUCTORS

被引：35

作者：

GOTO, G ^{[1
]}

YANAGISAWA, S ^{[1
]}

WADA, O ^{[1
]}

TAKANASHI, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD, KAMIKODANAKA, KAWASAKI, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 07期

关键词：

D O I：

10.1143/JJAP.13.1127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1127 / 1133

页数：7

共 15 条

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[2] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE
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ISHIBASHI, Y
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[3] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 138 - &
[4] DETERMINATION OF DEEP-LEVEL ENERGY AND DENSITY PROFILES IN INHOMOGENEOUS SEMICONDUCTORS
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YANAGISAWA, S
WADA, O
TAKANASHI, H
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 150 - 151
[5] FREQUENCY-DEPENDENCE OF GAAS SCHOTTKY-BARRIER CAPACITANCES
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STRACK, H
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 767 - +
[6] HILIBRAND J, 1960, RCA REV, V21, P245
[7] MEASUREMENT OF SCHOTTKY BARRIER EDGE CAPACITANCE CORRECTION
MANTENA, NR
BARRERA, JS
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (12) : 1000 - &
[8] DEPTH PROFILE OF CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES
OKAMOTO, H
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SAKAI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1316 - 1326
[9] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS
SAH, CT
REDDI, VGK
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) : 345 - +
[10] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS
SAH, CT
FORBES, L
ROSIER, LL
TASCH, AF
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

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