DEPTH PROFILE OF CONCENTRATION OF DEEP-LEVEL IMPURITIES IN VAPOR-PHASE EPITAXIAL GALLIUM-ARSENIDE GROWN UNDER VARIOUS ARSENIC VAPOR-PRESSURES

被引：33

作者：

OKAMOTO, H

SAKATA, S

SAKAI, K

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECTR COMMUN LAB, MUSASHINO, TOKYO, JAPAN

[2] UNIV TOKYO, INST IND SCI, MINATO, TOKYO, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 03期

关键词：

D O I：

10.1063/1.1662347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1316 / 1326

页数：11

相关论文

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