DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS

[1] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[2] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +

[3] COPELAND JA, 1971, IEEE T, VED18, P50

[4] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[5] TRAP LEVELS IN GALLIUM ARSENIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 675 - &

[6] HILIBRAND J, 1960, RCA REV, V21, P245

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +

[9] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3723 - +

[10] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[1] RECOMBINATION IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 990 - 1004

[2] SWITCHING AND LOW-FIELD BREAKDOWN IN N-GAAS BULK DIODES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (04) : 140 - +

[3] COPELAND JA, 1971, IEEE T, VED18, P50

[4] COPELAND JA, 1969, IEEE T ELECTRON DEVI, VED16, P445

[5] TRAP LEVELS IN GALLIUM ARSENIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (06) : 675 - &

[6] HILIBRAND J, 1960, RCA REV, V21, P245

[7] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 759 - +

[8] CAPACITANCE MEASUREMENTS ON AU-GAAS SCHOTTKY BARRIERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4581 - +

[9] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3723 - +

[10] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &