LATTICE MISMATCH AND BAND OFFSETS IN STRAINED LAYERS

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] BASTARD G, 1985, NATO ASI SERIES, P381

[4] BIR GL, 1974, SYMMETRY STRAIN INDU, pCH5

[5] CALLAWAY J, 1976, QUANTUM THEORY SOLID, pCH4

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144

[7] LIGHT-HEAVY-HOLE MIXING IN QUANTUM-WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 445 - 447

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[9] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553

[10] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : R1 - R29

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J]. PHYSICAL REVIEW, 1950, 80 (01): : 72 - 80

[3] BASTARD G, 1985, NATO ASI SERIES, P381

[4] BIR GL, 1974, SYMMETRY STRAIN INDU, pCH5

[5] CALLAWAY J, 1976, QUANTUM THEORY SOLID, pCH4

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2127 - 2144

[7] LIGHT-HEAVY-HOLE MIXING IN QUANTUM-WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) : 445 - 447

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985

[9] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553

[10] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (13) : 1414 - 1417