ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS

被引:48
作者
KROEMER, H
ZHU, QG
机构
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
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D O I
10.1116/1.571759
中图分类号
O59 [应用物理学];
学科分类号
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页码:551 / 553
页数:3
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共 13 条
[1]   SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J].
ANDREONI, W ;
CAR, R .
PHYSICAL REVIEW B, 1980, 21 (08) :3334-3344
[2]   PSEUDOPOTENTIAL CALCULATIONS FOR (GAAS)1-(ALAS)1 AND RELATED MONOLAYER HETEROSTRUCTURES [J].
CARUTHERS, E ;
LINCHUNG, PJ .
PHYSICAL REVIEW B, 1978, 17 (06) :2705-2718
[3]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[4]   TUNNELING FROM AN INDEPENDENT-PARTICLE POINT OF VIEW [J].
HARRISON, WA .
PHYSICAL REVIEW, 1961, 123 (01) :85-&
[5]  
IHM J, 1980, PHYS REV B, V20, P4120
[6]   ELECTRONIC-STRUCTURE OF INAS-GASB(001) SUPER-LATTICES - 2 DIMENSIONAL EFFECTS [J].
MADHUKAR, A ;
NUCHO, RN .
SOLID STATE COMMUNICATIONS, 1979, 32 (04) :331-336
[7]   GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].
MORKOC, H ;
WITKOWSKI, LC ;
DRUMMOND, TJ ;
STANCHAK, CM ;
CHO, AY ;
STREETMAN, BG .
ELECTRONICS LETTERS, 1980, 16 (19) :753-754
[8]  
PRICE PJ, 1962, P INT C PHYSICS SEMI, P99
[9]   INAS-GASB SUPER-LATTICE ENERGY STRUCTURE AND ITS SEMICONDUCTOR-SEMI-METAL TRANSITION [J].
SAIHALASZ, GA ;
ESAKI, L ;
HARRISON, WA .
PHYSICAL REVIEW B, 1978, 18 (06) :2812-2818
[10]   ELECTRONIC PROPERTIES OF THE ALAS-GAAS (001) INTERFACE AND SUPER-LATTICE [J].
SCHULMAN, JN ;
MCGILL, TC .
PHYSICAL REVIEW B, 1979, 19 (12) :6341-6349