QUANTITATIVE-ANALYSIS OF HREM IMAGES - MEASURES OF SIMILARITY

The interpretation of HREM micrographs requires a quantitative evaluation of the images, especially for matching procedures. To overcome visual inspections or simple contrast comparisons requires measures of similarity to be applied. Various definitions of similarity are compared with respect to their practical advantages in HREM. The different functions are introduced using model patterns typical of chemically tuned III-V semiconductor crystals. The derived formalism is applied to simulated HREM images of GaAs/P and 400 kV experimental micrographs of Al/GaAs.