CHEMICAL MAPPING AND ITS APPLICATION TO INTERFACES, POINT-DEFECTS AND MATERIALS PROCESSING

被引：15

作者：

OURMAZD, A

机构：

[1] AT and T Bell Laboratories, Holmdel

[2] AT and T Bell Laboratories, Holmdel

来源：

MATERIALS SCIENCE REPORTS | 1993年 / 9卷 / 06期

关键词：

D O I：

10.1016/S0920-2307(93)90009-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This review has two primary aims. First, it describes how the composition of materials may be quantitatively mapped with near-atomic resolution and sensitivity. Second, it outlines how this capability may be used to investigate important solid-state phenomena at the microscopic level. Specifically, the following topics are considered: interfacial roughness in semiconductor heterostructures and its effect on the optical properties of quantum wells; stability of modern interfaces against interdiffusion during typical annealing treatments; diffusion of intrinsic point defects in semiconductors; and the microscopics of ion implantation.

引用

页码：201 / 250

页数：50

共 61 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].