KINETICS OF NIAL3 GROWTH INDUCED BY STEADY-STATE THERMAL ANNEALING AT THE NI-(AL) INTERFACE

被引：25

作者：

ZHAO, XA ^{[1
]}

YANG, HY ^{[1
]}

MA, E ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 05期

关键词：

D O I：

10.1063/1.339563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1821 / 1825

页数：5

共 15 条

[1]

[Anonymous], 1967, HDB LATTICE SPACINGS

[2]

[Anonymous], ION BEAM SURFACE LAY

[3]

Baglin J.E.E., 1978, THIN FILMS INTERDIFF

[4]

BELSER RB, 1959, J APPL PHYS, V31, P562

[5]

Chu W. K., 1978, BACKSCATTERING SPECT

[6] INITIAL PHASE FORMATION AND DISSOCIATION IN THE THIN-FILM NI/AL SYSTEM [J].

COLGAN, EG ;

NASTASI, M ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4125-4129

[7]

GHANDHI SK, 1983, VLSI FABRICATION PRI, pCH7

[8]

GUPTA D, 1978, THIN FILMS INTERDIFF, pCH7

[9] KINETICS OF COMPOUND FORMATION IN THIN-FILM COUPLES OF AL AND TRANSITION-METALS [J].

HOWARD, JK ;

LEVER, RF ;

SMITH, PJ ;

HO, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :68-71

[10]

JANSSEN MMP, 1967, T METALL SOC AIME, V239, P1372

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