BALLISTIC CHARGE-CARRIER TRANSPORT IN SEMICONDUCTOR POINT CONTACTS

[1] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1965, 138 (4A): : 1270 - +

[2] BUSCH GV, 1962, HELV PHYS ACTA, V35, P497

[3] CONWELL EM, 1967, HIGH FIELD TRANSPO S, V9

[4] DAHLBERG R, COMMUNICATION

[5] DAHLBERG R, Patent No. 2547262

[6] EASTMAN LF, 1982, ADV SOLID STATE PHYS, V23, P173

[7] FERRY DK, 1980, PHYSICS NONLINEAR TR

[8] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199

[9] SEEBECK EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947

[10] THERMOVOLTAIC EVIDENCE FOR ELECTRONIC KNUDSEN-FLOW THROUGH SILICON MICROCONTACTS [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (20) : 1904 - 1906

[1] ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES [J]. PHYSICAL REVIEW, 1965, 138 (4A): : 1270 - +

[2] BUSCH GV, 1962, HELV PHYS ACTA, V35, P497

[3] CONWELL EM, 1967, HIGH FIELD TRANSPO S, V9

[4] DAHLBERG R, COMMUNICATION

[5] DAHLBERG R, Patent No. 2547262

[6] EASTMAN LF, 1982, ADV SOLID STATE PHYS, V23, P173

[7] FERRY DK, 1980, PHYSICS NONLINEAR TR

[8] CONDUCTANCE IN RESTRICTED-DIMENSIONALITY ACCUMULATION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (03) : 196 - 199

[9] SEEBECK EFFECT IN SILICON [J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947

[10] THERMOVOLTAIC EVIDENCE FOR ELECTRONIC KNUDSEN-FLOW THROUGH SILICON MICROCONTACTS [J]. PHYSICAL REVIEW LETTERS, 1983, 51 (20) : 1904 - 1906