ELECTRON AND PHONON SCATTERING IN GAAS AT HIGH TEMPERATURES

[1] APPARATUS FOR THE MEASUREMENT OF THE THERMAL DIFFUSIVITY OF SOLIDS AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1585 - 1592

[2] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[3] AD Stuces, 1961, BRIT J APPL PHYS, V12, p

[4] AMITH A, 1964, 7TH P INT C PHYS SEM, P393

[5] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[6] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 : 199 - 363

[7] NERNST EFFECT IN N-TYPE GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 422 - &

[8] THEORETICAL TRANSPORT COEFFICIENTS FOR POLAR SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 572 - 576

[9] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2899 - &

[10] EDMOND JT, 1957, REPORT M SEMICONDUCT, P109

[1] APPARATUS FOR THE MEASUREMENT OF THE THERMAL DIFFUSIVITY OF SOLIDS AT HIGH TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1585 - 1592

[2] THERMAL, ELECTRICAL AND OPTICAL PROPERTIES OF (IN,GA)AS ALLOYS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 204 - 210

[3] AD Stuces, 1961, BRIT J APPL PHYS, V12, p

[4] AMITH A, 1964, 7TH P INT C PHYS SEM, P393

[5] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1962, 9 (06) : 252 - &

[6] THEORY OF MOBILITY OF ELECTRONS IN SOLIDS [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 4 : 199 - 363

[7] NERNST EFFECT IN N-TYPE GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (APR) : 422 - &

[8] THEORETICAL TRANSPORT COEFFICIENTS FOR POLAR SEMICONDUCTORS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (472): : 572 - 576

[9] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) : 2899 - &

[10] EDMOND JT, 1957, REPORT M SEMICONDUCT, P109