ELECTRON-PHONON COUPLING IN BARRIERS OF GAAS SCHOTTKY DIODES

被引：14

作者：

THOMAS, P

QUEISSER, HJ

机构：

来源：

PHYSICAL REVIEW | 1968年 / 175卷 / 03期

关键词：

D O I：

10.1103/PhysRev.175.983

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：983 / &

共 16 条

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[5]

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