CONDUCTANCE ANOMALIES IN SEMICONDUCTOR TUNNEL DIODES

被引:57
作者
LOGAN, RA
ROWELL, JM
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D O I
10.1103/PhysRevLett.13.404
中图分类号
O4 [物理学];
学科分类号
0702 ;
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页码:404 / &
相关论文
共 5 条
[1]   PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS [J].
CHYNOWETH, AG ;
THOMAS, DE ;
LOGAN, RA .
PHYSICAL REVIEW, 1962, 125 (03) :877-&
[2]   DIRECT OBSERVATION OF POLARONS AND PHONONS DURING TUNNELING IN GROUP-3-5 SEMICONDUCTOR JUNCTIONS [J].
HALL, RN ;
RACETTE, JH ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1960, 4 (09) :456-458
[3]  
HALL RN, 1961, 1960 P INT C SEM PHY, P193
[4]   EFFECT OF DEGENERATE SEMICONDUCTOR BAND STRUCTURE ON CURRENT-VOLTAGE CHARACTERISTICS OF SILICON TUNNEL DIODES [J].
LOGAN, RA ;
CHYNOWETH, AG .
PHYSICAL REVIEW, 1963, 131 (01) :89-&
[5]   ANOMALOUS DENSITIES OF STATES IN NORMAL TANTALUM + NIOBIUM [J].
WYATT, AFG .
PHYSICAL REVIEW LETTERS, 1964, 13 (13) :401-&