CAPACITANCE OF SEMICONDUCTOR P-N-JUNCTION SPACE-CHARGE LAYERS - AN OVERVIEW

被引：16

作者：

LIOU, JJ ^{[1
]}

LINDHOLM, FA ^{[1
]}

机构：

[1] UNIV FLORIDA, DEPT ELECT ENGN, GAINESVILLE, FL 32611 USA

来源：

PROCEEDINGS OF THE IEEE | 1988年 / 76卷 / 11期

关键词：

D O I：

10.1109/5.90112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1406 / 1422

页数：17

共 56 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] EXPERIMENTAL-DETERMINATION OF FORWARD-BIASED EMITTER-BASE CAPACITANCE [J].

BOUMA, BC ;

ROELOFS, AC .

SOLID-STATE ELECTRONICS, 1978, 21 (06) :833-836

[3] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J].

BOWLER, DL ;

LINDHOLM, FA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) :257-263

[4] CAPACITANCE OF P-N JUNCTIONS - SPACE-CHARGE CAPACITANCE [J].

CHANG, YF .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2337-&

[5]

CHANG YF, 1967, SOLID STATE ELECTRON, V10, P281

[6] TRANSITION REGION CAPACITANCE OF DIFFUSED P-N JUNCTIONS [J].

CHAWLA, BR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :178-&

[7] POTENTIAL DISTRIBUTION AND CAPACITANCE OF ABRUPT HETEROJUNCTIONS [J].

CSERVENY, SI .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (01) :65-&

[8] COLLECTOR MODELS FOR BIPOLAR TRANSISTORS [J].

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1973, 16 (05) :587-600

[9]

DEGRAAFF HC, 1986, PROCESS DEVICE MODEL

[10] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION [J].

DEMARI, A .

SOLID-STATE ELECTRONICS, 1968, 11 (01) :33-+

← 1 2 3 4 5 6 →