POLARIZABILITY ENHANCEMENT IN DOPED SEMICONDUCTORS NEAR THE METAL-INSULATOR-TRANSITION

被引:3
作者
AGASSI, D
机构
来源
PHYSICAL REVIEW B | 1980年 / 22卷 / 06期
关键词
D O I
10.1103/PhysRevB.22.2803
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:2803 / 2815
页数:13
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