THE INTERACTION OF THIN AU AND AL OVERLAYERS WITH THE GAAS(110) SURFACE

被引：18

作者：

LINDAU, I

SKEATH, PR

SU, CY

SPICER, WE

机构：

来源：

SURFACE SCIENCE | 1980年 / 99卷 / 01期

关键词：

D O I：

10.1016/0039-6028(80)90589-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：192 / 201

页数：10

共 25 条

[1] METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS
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[2] BACHRACH RZ, 1978, 14TH P INT C PHYS SE, P1073
[3] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES
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[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (06) : 397 - 401
[4] SSRL ULTRAHIGH-VACUUM GRAZING INCIDENCE MONOCHROMATOR - DESIGN CONSIDERATIONS AND OPERATING EXPERIENCE
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1978, 152 (01): : 73 - 79
[5] CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
CHADI, DJ
BACHRACH, RZ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1159 - 1163
[6] DO AU 5D-BANDS NARROW AT SURFACE - COMPARISON WITH AU ALLOYS
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SPICER, WE
[J]. PHYSICS LETTERS A, 1977, 63 (03) : 387 - 389
[7] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
CHYE, PW
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PIANETTA, P
GARNER, CM
SU, CY
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
[8] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB
CHYE, PW
LINDAU, I
PIANETTA, P
GARNER, CM
SPICER, WE
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2682 - 2684
[9] SYNCHROTRON RADIATION AS A NEW TOOL WITHIN PHOTON-BEAM TECHNOLOGY
DONIACH, S
LINDAU, I
SPICER, WE
WINICK, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06): : 1123 - 1127
[10] ORDERED OXYGEN OVERLAYER ASSOCIATED WITH CHEMISORPTION STATE ON AL(111)
FLODSTROM, SA
MARTINSSON, CWB
BACHRACH, RZ
HAGSTROM, SBM
BAUER, RS
[J]. PHYSICAL REVIEW LETTERS, 1978, 40 (13) : 907 - 910

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