INTERPRETATION OF CHANNELING EFFECT MEASUREMENTS OF DISORDER IN ION-IMPLANTED SILICON

被引：5

作者：

EISEN, FH ^{[1
]}

BOTTIGER, J ^{[1
]}

机构：

[1] ROCKWELL INT,SCI CTR,THOUSAND OAKS,CA 91360

来源：

关键词：

D O I：

10.1063/1.1654996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3 / 5

页数：3

共 8 条

[1] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

BOTTIGER, J ;

EISEN, FH .

[3]

Eisen F.H., 1972, RADIAT EFF, V13, P93, DOI [10.1080/00337577208231165, DOI 10.1080/00337577208231165]

[4]

EISEN FH, 1971, ION IMPLANTATION SEM

[5] ENERGY DEPENDENCE OF LATTICE DISORDER IN ION-IMPLANTED SILICON [J].

MARSDEN, DA ;

BELLAVANCE, GR ;

DAVIES, JA ;

MARTINI, M ;

SIGMUND, P .

PHYSICA STATUS SOLIDI, 1969, 35 (01) :269-+

[6]

MAYER JW, 1970, ION IMPLANTATION SEM, pCH3

SIGMUND, P .

[8]

van Vliet D., 1971, Radiation Effects, V10, P137, DOI 10.1080/00337577108230421