THERMAL CVD OF HOMOEPITAXIAL DIAMOND USING CF4 AND F2

被引：25

作者：

RUDDER, RA

POSTHILL, JB

MARKUNAS, RJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 18期

关键词：

D O I：

10.1049/el:19890818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1220 / 1221

页数：2

共 6 条

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[6] SPIRAL HOLLOW-CATHODE PLASMA-ASSISTED DIAMOND DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (23) :2326-2327

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