CURRENT DEPENDENCE OF INTENSITY OF SPONTANEOUS EMISSION OF GAAS INJECTION LASERS TO FULL OPERATING POWER

被引：27

作者：

SOMMERS, HS

机构：

来源：

关键词：

D O I：

10.1063/1.1653756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：424 / &

共 12 条

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[J]. APPLIED PHYSICS LETTERS, 1963, 2 (09) : 173 - 174
[3] ROOM-TEMPERATURE CLOSE-CONFINEMENT GAAS LASER WITH OVERALL EXTERNAL QUANTUM EFFICIENCY OF 40 PERCENT
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (06): : 949 - &
[4] KRESSEL H, 1969, RCA REV, V30, P106
[5] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS
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STERN, F
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A553 - &
[6] EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER
LOCKWOOD, HF
KRESSEL, H
SOMMERS, HS
HAWRYLO, FZ
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 499 - &
[7] NORTH DO, PRIVATE COMMUNICATIO
[8] POPOV YM, 1969, SOV PHYS SEMICOND+, V3, P685
[9] Popov Yu. M., 1969, Fizika i Tekhnika Poluprovodnikov, V3, P803
[10] SIEGMAN AE, 1971, INTRO LASERS MASERS, P424