共 2 条
A TECHNIQUE FOR CORRECTION OF PARASITIC CAPACITANCE ON MICROWAVE-FT MEASUREMENTS OF MESFET AND HEMT DEVICES
被引:4
作者:
FENG, M
[1
]
LAU, CL
[1
]
ITO, C
[1
]
机构:
[1] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921
关键词:
D O I:
10.1109/22.97490
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The current gain cutoff frequency, f(t), has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The f(t) is related to a capacitance parameter, C(tot), through the equation f(t) = Gm/(2-pi-C(tot)). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported f(t) values. Ion implanted InGaAs MESFET's with 0.25-mu-gate lengths have achieved 120 GHz f(t) before correction and 151 GHz f(t) after correction.
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页码:1880 / 1882
页数:3
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