A TECHNIQUE FOR CORRECTION OF PARASITIC CAPACITANCE ON MICROWAVE-FT MEASUREMENTS OF MESFET AND HEMT DEVICES

被引:4
作者
FENG, M [1 ]
LAU, CL [1 ]
ITO, C [1 ]
机构
[1] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921
关键词
D O I
10.1109/22.97490
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current gain cutoff frequency, f(t), has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The f(t) is related to a capacitance parameter, C(tot), through the equation f(t) = Gm/(2-pi-C(tot)). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported f(t) values. Ion implanted InGaAs MESFET's with 0.25-mu-gate lengths have achieved 120 GHz f(t) before correction and 151 GHz f(t) after correction.
引用
收藏
页码:1880 / 1882
页数:3
相关论文
共 2 条
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