STUDIES OF MUON IMPLANTATION IN AMORPHOUS AND CRYSTALLINE SILICON

A study has been made of muons implanted into a-Si, a-Si:H, a-Si:D and, for comparison, polycrystalline Si. Resonance spectra were observed and measurements of the repolarisation of the promptly formed analogue of hydrogen, namely muonium, and of the fraction of muonium which reaches a diamagnetic state, were made. It is inferred that trapping sites exist, one of which is interstitial and the other bond-centred. A larger observed diamagnetic fraction in the amorphous samples is associated with muonium ionization by electron loss to tail states or to trapping at dangling bonds.