INFLUENCE OF HETEROINTERFACE ATOMIC-STRUCTURE AND DEFECTS ON 2ND-HARMONIC GENERATION

被引:40
作者
YEGANEH, MS [1 ]
QI, J [1 ]
YODH, AG [1 ]
TAMARGO, MC [1 ]
机构
[1] BELLCORE, RED BANK, NJ 07701 USA
关键词
D O I
10.1103/PhysRevLett.69.3579
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Second-harmonic spectroscopy is shown to be sensitive to interfacial electronic traps, lattice relaxation, and buried surface reconstruction in ZnSe/GaAs(001) heterostructures. Newly developed photomodulation-second-harmonic-generation experiments reveal that the interfacial region contains predominantly hole traps, and that the density of these traps is substantially lower for 3 x 1 buried surface reconstructed samples.
引用
收藏
页码:3579 / 3582
页数:4
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