INSITU DISTORTION MEASUREMENT OF AN ION PROJECTOR WITH 5X ION-OPTICAL REDUCTION

被引：12

作者：

STENGL, G ^{[1
]}

BOSCH, G ^{[1
]}

CHALUPKA, A ^{[1
]}

FEGERL, J ^{[1
]}

FISCHER, R ^{[1
]}

LAMMER, G ^{[1
]}

LOSCHNER, H ^{[1
]}

MALEK, L ^{[1
]}

NOWAK, R ^{[1
]}

TRAHER, C ^{[1
]}

WOLF, P ^{[1
]}

VONACH, H ^{[1
]}

机构：

[1] UNIV VIENNA,INST NUCL PHYS,A-1010 VIENNA,AUSTRIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585969

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ distortion measurements of an ion projector with 5X ion-optical reduction were performed. At optimum conditions the measured minimum distortion was less than 0.15 mum within an exposure field of 8 mmX8 mm. This result is in excellent agreement with fifth order ion-optical calculations.

引用

页码：2838 / 2841

页数：4

共 4 条

[1]

Armitage Jr J. J. D., 1988, P INT CIRC METR INSP P INT CIRC METR INSP, V921, P207

[2] SUB-0.25-MU-M ION PROJECTION LITHOGRAPHY (IPL) IN PMMA-BASED AND NOVOLAK-BASED RESIST MATERIALS (RAY-PF, RAY-PN, SAL-603) [J].

CEKAN, E ;

FALLMANN, W ;

FRIZA, W ;

PASCHKE, F ;

STANGL, G ;

HUDEK, P ;

BAYER, E ;

KRAUS, H .

MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) :241-244

[3] PROGRESS IN ION PROJECTION LITHOGRAPHY [J].

CHALUPKA, A ;

FEGERL, J ;

FISCHER, R ;

LAMMER, G ;

LOSCHNER, H ;

MALEK, L ;

NOWAK, R ;

STENGL, G ;

TRAHER, C ;

WOLF, P .

MICROELECTRONIC ENGINEERING, 1992, 17 (1-4) :229-240

[4]

CHALUPKA A, 1991, 14TH P S ION SOURC I

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