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LOCALIZED LEVELS NEAR SEMICONDUCTOR SURFACES

被引：5
作者：
GERLACH, E
机构：
[1] Battelle-Institut e.V., Frankfurt/Main
来源：
SURFACE SCIENCE | 1969年 / 13卷 / 02期
关键词：
D O I：
10.1016/0039-6028(69)90203-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
On the basis of simple models it is shown that the position in energy scale of localized levels near the surfaces of heavily doped semiconductors is different from their bulk values. © 1968.
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页码：446 / &
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