MOCVD GROWTH AND PL-CHARACTERISTICS OF ND DOPED GAAS

[1] BORPSOV GK, 1973, JN ONORG CHEM, V18, P663

[2] VAPOUR PRESSURES OF LEAD IODIDE + NEODYMIUM TRICYCLOPENTADIENIDE [J]. JOURNAL OF THE CHEMICAL SOCIETY, 1964, (JAN): : 360 - &

[3] ENNEN H, 1987, 19TH C SOL STAT DEV, P83

[4] LINEWIDTHS AND THERMAL SHIFTS OF SPECTRAL LINES IN NEODYMIUM-DOPED YTTRIUM ALUMINUM GARNET AND CALCIUM FLUOROPHOSPHATE [J]. PHYSICAL REVIEW, 1969, 185 (02): : 500 - +

[5] MULLER HD, 1986, J APPL PHYS, V59, P2210, DOI 10.1063/1.336360

[6] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 345 - 356

[7] LUMINESCENCE OF PR, ND AND YB IONS IMPLANTED IN GAAS AND GAP [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1988, 38 (11) : 1288 - 1293

[8] TEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE SPECTRA FOR ERBIUM-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1257 - 1260

[9] MAGNESIUM DOPING OF (AL,GA)AS IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3549 - 3554

[10] GROWTH OF ERBIUM-DOPED GAAS AND INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING ER(CH3C5H4)3 AND ER(C5H5)3 [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 583 - 588

[1] BORPSOV GK, 1973, JN ONORG CHEM, V18, P663

[2] VAPOUR PRESSURES OF LEAD IODIDE + NEODYMIUM TRICYCLOPENTADIENIDE [J]. JOURNAL OF THE CHEMICAL SOCIETY, 1964, (JAN): : 360 - &

[3] ENNEN H, 1987, 19TH C SOL STAT DEV, P83

[4] LINEWIDTHS AND THERMAL SHIFTS OF SPECTRAL LINES IN NEODYMIUM-DOPED YTTRIUM ALUMINUM GARNET AND CALCIUM FLUOROPHOSPHATE [J]. PHYSICAL REVIEW, 1969, 185 (02): : 500 - +

[5] MULLER HD, 1986, J APPL PHYS, V59, P2210, DOI 10.1063/1.336360

[6] LIQUID-PHASE EPITAXY AND CHARACTERIZATION OF RARE-EARTH-ION (YB, ER) DOPED INP [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 85 (03) : 345 - 356

[7] LUMINESCENCE OF PR, ND AND YB IONS IMPLANTED IN GAAS AND GAP [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1988, 38 (11) : 1288 - 1293

[8] TEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE SPECTRA FOR ERBIUM-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) : 1257 - 1260

[9] MAGNESIUM DOPING OF (AL,GA)AS IN METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3549 - 3554

[10] GROWTH OF ERBIUM-DOPED GAAS AND INP BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING ER(CH3C5H4)3 AND ER(C5H5)3 [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 583 - 588