LUMINESCENCE OF PR, ND AND YB IONS IMPLANTED IN GAAS AND GAP

被引：9

作者：

RZAKULIEV, NA ^{[1
]}

KONNOV, VM ^{[1
]}

YAKIMKIN, VN ^{[1
]}

USHAKOV, VV ^{[1
]}

GIPPIUS, AA ^{[1
]}

OSWALD, J ^{[1
]}

PASTRNAK, J ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE 8, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1007/BF01597299

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1288 / 1293

页数：6

共 15 条

[1] ZEEMAN ANALYSIS OF THE YTTERBIUM LUMINESCENCE IN INDIUM-PHOSPHIDE
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[J]. PHYSICAL REVIEW B, 1985, 31 (12): : 7767 - 7771
[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[3] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS
ENNEN, H
KAUFMANN, U
POMRENKE, G
SCHNEIDER, J
WINDSCHEIF, J
AXMANN, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 165 - 168
[4] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS
ENNEN, H
POMRENKE, G
AXMANN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2182 - 2185
[5] ENNEN H, 1982, Patent No. 33441383
[6] YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M
HAYDL, WH
MULLER, HD
ENNEN, H
KORBER, W
BENZ, KW
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 870 - 872
[7] KASATKIN VA, 1980, FIZ TEKH POLUPROV, V14, P1832
[8] KASATKIN VA, 1984, FIZ TEKH POLUPROV, V18, P1634
[9] KASATKIN VA, 1981, FIZ TEKH POLUPROV, V15, P616
[10] KASATKIN VA, 1982, FIZ TEKH POLUPROV, V16, P173