YTTERBIUM-DOPED INP LIGHT-EMITTING DIODE AT 1.0-MU-M

被引：65

作者：

HAYDL, WH ^{[1
]}

MULLER, HD ^{[1
]}

ENNEN, H ^{[1
]}

KORBER, W ^{[1
]}

BENZ, KW ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS 4,KRISTALLAB,D-7000 STUTTGART 80,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.95869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：870 / 872

页数：3

共 16 条

[1]

BERGH AA, 1976, LIGHT EMITTING DIODE, P35

[2]

DMITRIEV AG, 1983, SOV PHYS SEMICOND+, V17, P1201

[3] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[4] RARE-EARTH ACTIVATED LUMINESCENCE IN INP, GAP AND GAAS [J].

ENNEN, H ;

KAUFMANN, U ;

POMRENKE, G ;

SCHNEIDER, J ;

WINDSCHEIF, J ;

AXMANN, A .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :165-168

[5] LUMINESCENCE OF THE RARE-EARTH ION YTTERBIUM IN INP, GAP, AND GAAS [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2182-2185

[6]

ENNEN H, 1985, J ELECTRON MATER A, V14, P115

[7] AVALANCHE BREAKDOWN VOLTAGES FOR III-V SEMICONDUCTORS [J].

HAUSER, JR .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :351-353

[8] LIQUID-PHASE EPITAXY OF INP [J].

HESS, K ;

STATH, N ;

BENZ, KW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1208-1212

[9]

KASATKIN VA, 1981, SOV PHYS SEMICOND+, V15, P352

[10]

KASATKIN VA, 1980, SOV PHYS SEMICOND+, V14, P1092

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