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- [2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS[J]. PHYSICAL REVIEW, 1962, 128 (06): : 2507 - &BARAFF, GA
- [3] Beattie A.R., 1958, P R SOC LOND, V249, P16
- [4] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 242 - &CROWELL, CRSZE, SM
- [5] HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09): : 1641 - 1654FAWCETT, WHERBERT, DC
- [6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &FAWCETT, WBOARDMAN, ADSWAIN, S
- [7] VELOCITY-FIELD RELATIONSHIP OF INAS-INP ALLOYS INCLUDING EFFECTS OF ALLOY SCATTERING[J]. APPLIED PHYSICS LETTERS, 1976, 28 (08) : 458 - 461HAUSER, JRLITTLEJOHN, MAGLISSON, TH
- [8] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE[J]. ELECTRONICS LETTERS, 1970, 6 (09) : 277 - &HILSUM, CREES, HD
- [9] MONTE-CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM NITRIDE[J]. APPLIED PHYSICS LETTERS, 1975, 26 (11) : 625 - 627LITTLEJOHN, MAHAUSER, JRGLISSON, TH
- [10] TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) : 781 - 787MALONEY, TJFREY, J