MODULATION-DOPED ALLNAS/INP HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：11

作者：

AINA, L

MATTINGLY, M

POTTER, B

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.103630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V s at 2, 77, and 300 K, with electron concentrations as high as 1.5×1012 cm-2. These results demonstrate the potential of the AlInAs/InP heterostructure for power microwave applications.

引用

页码：492 / 493

页数：2

共 8 条

[1] HIGH MOBILITY, SELECTIVELY DOPED INP GAINAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
AINA, L
MATTINGLY, M
POTTER, B
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1735 - 1737
[2] PHOTOLUMINESCENCE FROM ALLNAS/INP QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
AINA, L
MATTINGLY, M
STECKER, L
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1620 - 1622
[3] AINA L, 1983, J APPL PHYS, V64, P5253
[4] AINA O, 1983, J CRYST GROWTH, V93, P911
[5] STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - EXPERIMENTAL-VERIFICATION
CAINE, EJ
SUBBANNA, S
KROEMER, H
MERZ, JL
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1123 - 1125
[6] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[7] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 242 - 244
[8] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262

← 1 →