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HIGH MOBILITY, SELECTIVELY DOPED INP GAINAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：14
作者：
AINA, L
MATTINGLY, M
POTTER, B
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 21期
关键词：
D O I：
10.1063/1.98559
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1735 / 1737
页数：3
相关论文
共 4 条
[1]  
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[2]   LOW-PRESSURE MOCVD GROWTH OF GA0.47IN0.53AS-INP HETEROJUNCTION AND SUPER-LATTICES [J].
RAZEGHI, M ;
DUCHEMIN, JP .
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[3]   CALCULATED ELECTRON-MOBILITY OF TWO-DIMENSIONAL ELECTRONS IN ALINAS/INGAAS AND INP/INGAAS SINGLE HETEROSTRUCTURES [J].
TAKEDA, Y ;
SASAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (10) :1307-1311
[4]   TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY [J].
TSANG, WT ;
CHANG, AM ;
DITZENBERGER, JA ;
TABATABAIE, N .
APPLIED PHYSICS LETTERS, 1986, 49 (15) :960-962
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