LOW-PRESSURE MOCVD GROWTH OF GA0.47IN0.53AS-INP HETEROJUNCTION AND SUPER-LATTICES

被引：19

作者：

RAZEGHI, M

DUCHEMIN, JP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：262 / 265

页数：4

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