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AN ACCURATE METHOD TO CHECK CHEMICAL INTERFACES OF EPITAXIAL III-V-COMPOUNDS
被引:59
作者
:
BISARO, R
论文数:
0
引用数:
0
h-index:
0
BISARO, R
LAURENCIN, G
论文数:
0
引用数:
0
h-index:
0
LAURENCIN, G
FRIEDERICH, A
论文数:
0
引用数:
0
h-index:
0
FRIEDERICH, A
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1982年
/ 40卷
/ 11期
关键词
:
D O I
:
10.1063/1.92974
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:978 / 980
页数:3
相关论文
共 8 条
[1]
MINIMUM AL0.5GA0.5AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUES
GARNER, CM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GARNER, CM
SU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SU, CY
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
EDWOOD, PD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
EDWOOD, PD
论文数:
引用数:
h-index:
机构:
MILLER, D
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HARRIS, JS
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(09)
: 610
-
611
[2]
GARNER CM, 1979, APPL PHYS LETT, V34, P335
[3]
SOME CONSIDERATIONS OF THE LIMITATIONS OF THE AUGER-DEPTH-PROFILING TECHNIQUE AS APPLIED TO SILVER METAL AND (100) SURFACES OF INDIUM-PHOSPHIDE
JONES, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Interfacial Physics Group, Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham
JONES, CJ
KIRK, DL
论文数:
0
引用数:
0
h-index:
0
机构:
Interfacial Physics Group, Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham
KIRK, DL
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1979,
12
(06)
: 837
-
844
[4]
MELLET R, COMMUNICATION
[5]
1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
HIRTZ, P
论文数:
0
引用数:
0
h-index:
0
HIRTZ, P
LARIVAIN, JP
论文数:
0
引用数:
0
h-index:
0
LARIVAIN, JP
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BLONDEAU, R
DECREMOUX, B
论文数:
0
引用数:
0
h-index:
0
DECREMOUX, B
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
ELECTRONICS LETTERS,
1981,
17
(18)
: 643
-
642
[6]
RAZEGHI M, UNPUB ELECTRON LETT
[7]
DEVELOPMENT OF SURFACE-TOPOGRAPHY DURING DEPTH PROFILING IN AUGER-ELECTRON SPECTROSCOPY
SMITH, R
论文数:
0
引用数:
0
h-index:
0
机构:
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
SMITH, R
WALLS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
WALLS, JM
[J].
SURFACE SCIENCE,
1979,
80
(01)
: 557
-
565
[8]
DEPTH RESOLUTION DEGRADATION OF SPUTTER-PROFILED INP-INXGA1-XASYP1-Y INTERFACES CAUSED BY CONE FORMATION
WILLIAMS, RS
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, RS
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
SCHLIER, AR
论文数:
0
引用数:
0
h-index:
0
SCHLIER, AR
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(10)
: 827
-
829
←
1
→
共 8 条
[1]
MINIMUM AL0.5GA0.5AS-GAAS HETEROJUNCTION WIDTH DETERMINED BY SPUTTER-AUGER TECHNIQUES
GARNER, CM
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
GARNER, CM
SU, CY
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SU, CY
SPICER, WE
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
SPICER, WE
EDWOOD, PD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
EDWOOD, PD
论文数:
引用数:
h-index:
机构:
MILLER, D
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
HARRIS, JS
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(09)
: 610
-
611
[2]
GARNER CM, 1979, APPL PHYS LETT, V34, P335
[3]
SOME CONSIDERATIONS OF THE LIMITATIONS OF THE AUGER-DEPTH-PROFILING TECHNIQUE AS APPLIED TO SILVER METAL AND (100) SURFACES OF INDIUM-PHOSPHIDE
JONES, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
Interfacial Physics Group, Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham
JONES, CJ
KIRK, DL
论文数:
0
引用数:
0
h-index:
0
机构:
Interfacial Physics Group, Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham
KIRK, DL
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1979,
12
(06)
: 837
-
844
[4]
MELLET R, COMMUNICATION
[5]
1.5 MU-M ROOM-TEMPERATURE PULSED OPERATION OF GAINASP-INP DOUBLE HETEROSTRUCTURE GROWN BY LP MOCVD
RAZEGHI, M
论文数:
0
引用数:
0
h-index:
0
RAZEGHI, M
HIRTZ, P
论文数:
0
引用数:
0
h-index:
0
HIRTZ, P
LARIVAIN, JP
论文数:
0
引用数:
0
h-index:
0
LARIVAIN, JP
BLONDEAU, R
论文数:
0
引用数:
0
h-index:
0
BLONDEAU, R
DECREMOUX, B
论文数:
0
引用数:
0
h-index:
0
DECREMOUX, B
DUCHEMIN, JP
论文数:
0
引用数:
0
h-index:
0
DUCHEMIN, JP
[J].
ELECTRONICS LETTERS,
1981,
17
(18)
: 643
-
642
[6]
RAZEGHI M, UNPUB ELECTRON LETT
[7]
DEVELOPMENT OF SURFACE-TOPOGRAPHY DURING DEPTH PROFILING IN AUGER-ELECTRON SPECTROSCOPY
SMITH, R
论文数:
0
引用数:
0
h-index:
0
机构:
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
SMITH, R
WALLS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICESTERSHIRE,ENGLAND
WALLS, JM
[J].
SURFACE SCIENCE,
1979,
80
(01)
: 557
-
565
[8]
DEPTH RESOLUTION DEGRADATION OF SPUTTER-PROFILED INP-INXGA1-XASYP1-Y INTERFACES CAUSED BY CONE FORMATION
WILLIAMS, RS
论文数:
0
引用数:
0
h-index:
0
WILLIAMS, RS
NELSON, RJ
论文数:
0
引用数:
0
h-index:
0
NELSON, RJ
SCHLIER, AR
论文数:
0
引用数:
0
h-index:
0
SCHLIER, AR
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(10)
: 827
-
829
←
1
→