HYDRIDE MULTIBARREL REACTORS SUITABLE FOR MICROWAVE AND OPTOELECTRONIC (GA,IN)(AS,P) HETEROSTRUCTURE GROWTH

被引：24

作者：

BEUCHET, G

BONNET, M

THEBAULT, P

DUCHEMIN, JP

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 57卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90494-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：379 / 386

页数：8

共 7 条

[1]

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[2]

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[3] RELIABILITY OF VAPOR-GROWN INGAAS AND INGAASP HETEROJUNCTION LASER STRUCTURES [J].

OLSEN, GH ;

NUESE, CJ ;

ETTENBERG, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :688-693

[4] CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE [J].

OLSEN, GH ;

ZAMEROWSKI, TJ .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (04) :309-375

[5] VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS-INASP HETEROJUNCTIONS FOR LONG WAVELENGTH TRANSFERRED ELECTRON PHOTO-CATHODES [J].

SAXENA, RR ;

HYDER, SB ;

GREGORY, PE ;

ESCHER, JS .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (02) :481-484

[6] VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-YINYAS1-XPX QUATERNARY ALLOYS [J].

SUGIYAMA, K ;

KOJIMA, H ;

ENDA, H ;

SHIBATA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (12) :2197-2203

[7]

ZINKIEWICZ LM, 1981, I PHYS C SER, V56, P19

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