CRYSTAL-GROWTH AND PROPERTIES OF BINARY, TERNARY AND QUATERNARY (IN,GA)(AS,P) ALLOYS GROWN BY THE HYDRIDE VAPOR-PHASE EPITAXY TECHNIQUE

被引：78

作者：

OLSEN, GH

ZAMEROWSKI, TJ

机构：

[1] RCA Laboratories, Princeton

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1979年 / 2卷 / 04期

关键词：

D O I：

10.1016/0146-3535(81)90039-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

[No abstract available]

引用

收藏

页码：309 / 375

页数：67

相关论文

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