GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS

被引：62

作者：

BOTEZ, D

TSANG, WT

WANG, S

机构：

[1] UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期

关键词：

D O I：

10.1063/1.88710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：234 / 237

页数：4

共 15 条

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[2] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION
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[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06): : 726 - &
[3] DIFFUSED 2-DIMENSIONAL OPTICAL-WAVEGUIDES IN GAAS
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LOVELACE, DF
THOMPSON, GHB
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (06) : 329 - 331
[4] HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/S0022-0248(74)80049-7
[5] SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 768 - &
[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS
LOGAN, RA
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4172 - 4176
[7] SURVEY OF INTEGRATED OPTICS
MILLER, SE
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1972, QE 8 (02) : 199 - +
[8] COMPARISON OF THEORY AND EXPERIMENT FOR LPE LAYER THICKNESS OF GAAS AND GAAS ALLOYS
MOON, RL
KINOSHITA, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) : 149 - 154
[9] UNIVERSAL STAIN-ETCHANT FOR INTERFACES IN III-V COMPOUNDS
OLSEN, GH
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 5112 - 5114
[10] TRANSMISSION PROPERTIES OF RIB WAVEGUIDES FORMED BY ANODIZATION OF EPITAXIAL GAAS ON ALXGA1-X AS LAYERS
REINHART, FK
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (06) : 270 - 272

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