SELECTIVE ETCHING OF GALLIUM ARSENIDE CRYSTALS IN H2SO4-H2O2-H2O SYSTEM

被引：149

作者：

LIDA, S

机构：

来源：

关键词：

D O I：

10.1149/1.2408161

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：768 / &

共 5 条

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BRADY, DP ;

KNIGHT, S ;

LAWLEY, KL ;

UENOHARA, M .

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[2]

Holmes P.J, 1962, ELECTROCHEMISTRY SEM, P256

[3]

IIDA S, TO BE PUBLISHED

[4] ENHANCE GAAS ETCH RATES NEAR EDGES OF A PROTECTIVE MASK [J].

SHAW, DW .

[5] VAPOR PHASE GROWTH OF GALLIUM ARSENIDE MICROWAVE DIODES [J].

TIETJEN, JJ ;

KUPSKY, G ;

GOSSENBERGER, H .