TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY

被引：21

作者：

TSANG, WT ^{[1
]}

CHANG, AM ^{[1
]}

DITZENBERGER, JA ^{[1
]}

TABATABAIE, N ^{[1
]}

机构：

[1] BELL COMMUN RES,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 15期

关键词：

D O I：

10.1063/1.97495

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：960 / 962

页数：3

共 11 条

[1] ALLOY SCATTERING LIMITED MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS FORMED IN IN0.53GA0.47AS
BASU, PK
NAG, BR
[J]. SURFACE SCIENCE, 1984, 142 (1-3) : 256 - 259
[2] CHEN KT, 1985, APPL PHYS LETT, V47, P44
[3] TWO-DIMENSIONAL ELECTRON-GAS IN A IN0.53GA0.47AS-INP HETEROJUNCTION GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GULDNER, Y
VIEREN, JP
VOISIN, P
VOOS, M
RAZEGHI, M
POISSON, MA
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 877 - 879
[4] TWO-DIMENSIONAL ELECTRON-GAS AT A MOLECULAR-BEAM EPITAXIAL-GROWN, SELECTIVELY DOPED, IN0.53GA0.47AS-IN0.48AL0.52AS INTERFACE
KASTALSKY, A
DINGLE, R
CHENG, KY
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 274 - 277
[5] 1ST OBSERVATION OF THE QUANTUM HALL-EFFECT IN A GA0.47IN0.53AS-INP HETEROSTRUCTURE WITH 3 ELECTRIC SUBBANDS
RAZEGHI, M
DUCHEMIN, JP
PORTAL, JC
DMOWSKI, L
REMENI, G
NICHOLAS, RJ
BRIGGS, A
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (11) : 712 - 714
[6] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
STORMER, HL
DINGLE, R
GOSSARD, AC
WIEGMANN, W
STURGE, MD
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709
[7] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY
TAKIKAWA, M
KOMENO, J
OZEKI, M
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 280 - 282
[8] CHEMICAL BEAM EPITAXIAL-GROWTH OF EXTREMELY HIGH-QUALITY INGAAS ON INP
TSANG, WT
DAYEM, AH
CHIU, TH
CUNNINGHAM, JE
SCHUBERT, EF
DITZENBERGER, JA
SHAH, J
ZYSKIND, JL
TABATABAIE, N
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 170 - 172
[9] CHEMICAL BEAM EPITAXY OF INP AND GAAS
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1234 - 1236
[10] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
SCHUBERT, EF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222

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